How can rising thermal resistance during power cycling distinguish die-attach degradation, interconnect fatigue, and external thermal-interface changes?
BLNKK editorial notes on measurement, interpretation and limits, based on public sources.
Power cyclingThermal resistanceDie attachFailure analysis
Problem context and interpretation
BLNKK review of public information
Rising resistance may originate in internal bond layers, external TIM, or clamping, or reflect temperature-estimation and electrical-measurement drift. A single end-of-life cross-section cannot reconstruct degradation order.
Fix thermal-resistance and junction-temperature calculations and calibration first.
Track electrical metrics that represent interconnect condition simultaneously.
Use interrupted samples to build time-series images and cross-sections.
Key point: Check the measurement chain and external thermal path first
When resistance drifts, check consistency of junction-temperature estimation, cold-plate conditions, TIM, and clamping, then examine VCE(sat) or other interconnect trends. Without this baseline, fixture changes can be mistaken for die-attach degradation.
BLNKK editorial notes
Key point: Establish degradation order with interrupted samples
Do not compare only zero-cycle and failed endpoints. Schedule interruptions around resistance-curve transitions and combine C-SAM with identical scan gates, electrical data, and representative cross-sections to determine whether delamination or interconnect degradation occurred first.
Experts have not yet been invited. These are BLNKK editorial notes. Contributions require submission and review; they are not published automatically.
