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ST-250 copper post-etch residue cleaner

Entegris · Material properties and interface engineering

Purpose
RDL contact-resistance anomalies require separating etch residue, metal loss and seed coverage before comparing cleaning.
Technical approach
ST-250 chemically removes plasma-etch residue from compatible copper/barrier/etch-stop systems through wet processing.
Scope of use
The named catalog entry lists Cu/WLP; detailed documentation centers on copper dual damascene, requiring RDL-film and rinse compatibility confirmation.
Limitations and open questions

These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.

Scope and limitations

Evidence does not qualify every RDL polymer or establish root cause from cleaning results. The datasheet explicitly prohibits IPA as an intermediate rinse.

What to prepare

BLNKK suggests documenting residues, films, temperature/time and rinsing, comparing metal loss, roughness, dielectric condition and contact resistance before/after cleaning.

Confirm with the supplier

Confirm material/equipment compatibility, opening-specific cleaning/rinse recipes, current safety/use documents and relevant evaluation data.

Public evidence
The product page, catalog entry and November 2017 datasheet provide applications and condition-specific material/cleaning evidence.

Supporting references

Contact the supplier

Find the company’s contact details and ask about this solution through its official channels.

Related engineering problems

These links use established solution relationships. Continue to engineering conditions and evaluation preparation.

BLNKK organizes information from public sources. A company profile does not imply a documented solution. Applicability still needs confirmation against your samples and engineering conditions.