TOK PMER P-CY1000 deep-silicon-etch resist
Tokyo Ohka Kogyo Co., Ltd. · Material properties and interface engineering
- Purpose
- Assess an upstream deep-Si etch mask in a TSV liner-leakage investigation, separating sidewall/residue checks from later dielectric coverage.
- Technical approach
- Thick-film positive resist defines the etch pattern; P-CY1000 emphasizes resistance to cracking during low-temperature etching.
- Scope of use
- TOK lists MEMS/TSV deep etching. Confirm the grade for actual holes, mask thickness and Bosch/non-Bosch conditions.
- Limitations and open questions
These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.
Scope and limitationsMask crack resistance does not establish smooth sidewalls, continuous liners or acceptable leakage. Example conditions are not a universal process window or a repair.
What to prepareBLNKK suggests preparing hole dimensions, mask thickness/pattern, chemistry and temperature history. Preserve post-strip sidewall/residue images and correlate available liner sections or leakage locations.
Confirm with the supplierConfirm etch/mask compatibility, example applicability and stripping. Agree on sidewall/residue and subsequent liner checks; leakage requires separate electrical validation.
- Public evidence
- TOK provides a crack-resistance example, not a validated liner-coverage or leakage result for your TSV.
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BLNKK organizes information from public sources. A company profile does not imply a documented solution. Applicability still needs confirmation against your samples and engineering conditions.