Align calibrated measurements of silicon around TSVs, thermal baselines, a model of this stack, and device responses to make relative comparisons of materials and layouts only.
Silicon around TSVs and nearby active devices · Thermal annealing, operation, and layout verification
First correlate electrical drift with local wire-foot / heel evidence, then compare bonding records and actual thermal / mechanical loads. Overall thermal resistance and a single pull-force value cannot substitute for wire-bond fatigue modes.
Power-module wire-bond joints and heels · After power cycling or mechanical fatigue
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