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Current problemStress around TSVs and device keep-out design
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Stress around TSVs and device keep-out design

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3 priority paths11 candidate solutions9 sources

BLNKK's current understanding

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Structure / bonding interface
Silicon around TSVs and nearby active devices
Observation stage
Thermal annealing, operation, and layout verification
Phenomenon to localize
Local strain, device parameters, or cracks around TSVs
Engineering decision
Use the relationship between stress and device location to determine keep-out layouts and compare material and geometry options
Sample evidence still required
How do Raman or strain observables correspond to the modeled components?
Next: confirm engineering conditionsUse 5 key conditions to adjust the assessment order, then choose solutions to compare.
Check engineering conditions →