Stress around TSVs and device keep-out design: How should the next round of comparisons be designed?

First align silicon and device locations, measurable observables, and thermal histories before and after via filling.

Stress around TSVsDevice keep-out areaThermal history

Problem context and interpretation

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How do Raman or strain observables correspond to the modeled components?
Are same-location baselines available for pre-existing stress before filling and for operating temperatures?
How do this device's orientation, controls without TSVs, and performance criteria guide distance comparisons?

Reference sourcesYe Zhu et al. / author repository：On the Origins of Near-Surface Stresses in Silicon around Cu-filled and CNT-filled Through Silicon Vias ↗

Technical Q&A awaiting input

How do Raman or strain observables correspond to the modeled components?
Are same-location baselines available for pre-existing stress before filling and for operating temperatures?
How do this device's orientation, controls without TSVs, and performance criteria guide distance comparisons?

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Stress around TSVs and device keep-out design: How should the next round of comparisons be designed?

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