Custom high-density IC substrates
AT&S · Package architecture and warpage compensation
- Purpose
- High-contact-count processors and multi-die packages need signal and power routing within limited area. Substrate stack-up, interconnect density and thermomechanical behavior need coordinated design.
- Technical approach
- AT&S describes reinforced cores with copper-plated vias and dielectric/copper build-up layers, using semi-additive SAP processing for high-density interconnects.
- Scope of use
- Its customized IC substrates address high-performance processors, AI/data-center and multi-die integration needs. Available materials, dimensions, layer counts and design rules require project-specific confirmation.
- Limitations and open questions
These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.
Scope and limitationsInterconnect density does not establish low package warpage or a particular lifetime. The reviewed pages describe glass and two-micrometer capabilities as development work, not confirmed standard supply.
What to prepareBLNKK suggests preparing die/package dimensions, contacts/routing, signal and power requirements, stack-up/copper distribution, material thermomechanical data, assembly thermal histories and warpage measurements.
Confirm with the supplierConfirm design rules, material/stack options, manufacturing/supply status, dimensional and warpage acceptance criteria, reliability evidence and simulation support. Confirm an adoption schedule separately for development routes.
- Public evidence
- The current English/German pages describe build-up/SAP processing and five-micrometer conductor widths. Two-micrometer structures and glass carriers are described as development directions, not universally orderable specifications.
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BLNKK organizes information from public sources. A company profile does not imply a documented solution. Applicability still needs confirmation against your samples and engineering conditions.