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ICROS wafer back-grinding protection tape

Mitsui Chemicals · Material properties and interface engineering

Purpose
Wafer back-grinding needs front-side and bump protection, with support, handling and tape-removal conditions evaluated after thinning.
Technical approach
ICROS covers the wafer front side with a protective film and adhesive. Mitsui distinguishes conventional, bumped-wafer and thin-grinding tape families.
Scope of use
It supports silicon-wafer back-grinding protection; UV/non-UV, bump accommodation and thin-wafer options depend on the selected family.
Limitations and open questions

These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.

Scope and limitations

Bump and UV/non-UV options differ across families; one removal process cannot be assumed for every grade. The page does not establish the intended grade’s UV dose or removal window, and its claims do not guarantee damage-free or residue-free results on every wafer.

What to prepare

BLNKK suggests preparing wafer size/front-side structure, bump height, target thickness, grinding/taping conditions and removal method, with damage, residue and total thickness variation (TTV) inspection results.

Confirm with the supplier

Confirm the grade, film thickness, adhesion and bump compatibility, including whether UV is needed and its exposure/removal conditions. Agree validation of thinning, handling and cleanliness on representative wafers.

Public evidence
Mitsui’s ICROS page separates the variants and describes reduced adhesion after irradiation for some UV tapes.

Contact the supplier

Find the company’s contact details and ask about this solution through its official channels.

Related engineering problems

These links use established solution relationships. Continue to engineering conditions and evaluation preparation.

BLNKK organizes information from public sources. A company profile does not imply a documented solution. Applicability still needs confirmation against your samples and engineering conditions.