Nova Elipson Raman stress mapping around TSVs

Nova · Warpage, topography and stress metrology

Purpose: TSV stress changes with geometry and processing; local measurements can be compared with models.
Technical approach: Elipson uses silicon Raman shifts to estimate strain/stress. Excitation, polarization and reference regions affect the measurement.
Scope of use: Optically accessible silicon regions; the official TSV study demonstrates line scans and maps across processes and arrays.
Limitations and open questions: These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.
Scope and limitations
The study’s single-surface geometry cannot separate in-plane/out-of-plane components, and metal coverage blocks the measurement. Spectra do not directly yield a full 3D tensor or safe keep-out distance; detailed maps are not production monitoring throughput.
What to prepare
BLNKK suggests preparing geometry, crystal orientation, coverage, temperature and process history, with references and scan locations aligned to model coordinates.
Confirm with the supplier
Confirm optical access, wavelength/polarization, effective depth, conversion/calibration and development-scan or production-sampling strategy. Assess results against device-specific tolerances.
Public evidence: Nova documents Raman metrology. IBM/Nova’s April 2023 SPIE paper names Elipson and describes measurement-geometry limitations.

Supporting references

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