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UNIMEC H9888-3 pressureless silver-sinter die attach

NAMICS · Material properties and interface engineering

Purpose
Evaluate silver-sintering die attach for power chips, including how deposition and thermal history affect porosity and interfaces.
Technical approach
H9888-3 forms an electrically/thermally conductive sintered-silver layer; NAMICS identifies it as pressureless bonding material.
Scope of use
Listed uses include power IC, SiC/GaN, large-area chips and printing/dispensing. Metallization and actual sintering configuration require confirmation.
Limitations and open questions

These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.

Scope and limitations

Pressureless does not establish compatibility with every metallization. Other grades' bare-copper applications and tabulated properties do not qualify the actual package.

What to prepare

BLNKK suggests die size, both metallizations, deposition/bondline, drying/sintering history and porosity, shear and cycling data.

Confirm with the supplier

Confirm compatible surfaces, deposition/drying and atmosphere-specific ramp/hold windows; discuss bondline porosity, adhesion and thermal-performance validation.

Public evidence
The official table lists grade-specific properties and different H9888-3 air/nitrogen thermal profiles.

Contact the supplier

Find the company’s contact details and ask about this solution through its official channels.

Related engineering problems

These links use established solution relationships. Continue to engineering conditions and evaluation preparation.

BLNKK organizes information from public sources. A company profile does not imply a documented solution. Applicability still needs confirmation against your samples and engineering conditions.