Syndion deep-silicon TSV etching

Lam Research · Process equipment and thermal control

Purpose: Evaluate TSV depth, sidewalls and scallops before downstream liner, seed and copper-fill development.
Technical approach: Syndion uses plasma-based deep silicon etch with rapidly alternating etch/protection steps for depth, profile and cross-wafer control.
Scope of use: Supplier-listed HBM/advanced-packaging TSVs; geometry, mask and stack capability depend on the C/F/G-series configuration.
Limitations and open questions: These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.
Scope and limitations
Reducing scallops can sacrifice rate; the balance is recipe-dependent. Profile control alone does not establish liner integrity, seed continuity or copper-fill reliability.
What to prepare
BLNKK suggests preparing via dimensions, mask/stack, wafer thickness/support and profile, scallop and uniformity targets.
Confirm with the supplier
Confirm configuration, selectivity, endpoint, rate/scallop balance and post-cleaning; discuss profile measurements and downstream liner/fill trials.
Public evidence: Lam documents RAP and the scallop-size/etch-rate tradeoff without publishing a universal depth or rate window.

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