SABRE 3D electrochemical deposition for advanced packaging
Addresses voids, thickness uniformity and within-die coplanarity in TSV filling and packaging-interconnect plating.
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View contact information ↓Applications: TSV, RDL, copper pillars, microbumps and HDFO · HBM / interposer TSV formation · Wafer-bonding bevel processes · TSV dielectric-liner processes
Addresses voids, thickness uniformity and within-die coplanarity in TSV filling and packaging-interconnect plating.
Evaluate TSV depth, sidewalls and scallops before downstream liner, seed and copper-fill development.
Bonding abnormalities with evidence of edge contamination need comparisons of residues and bevel protection.
TSV leakage assessment requires comparison of depth-dependent liner coverage and dielectric properties, not nominal thickness alone.
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