CELLESTA-i MD metal-exposed surface cleaning/drying
Tokyo Electron · Process equipment and thermal control
- Purpose
- Evaluate wet cleaning and drying of metal-exposed wafers before bonding.
- Technical approach
- Single-wafer chemical cleaning/wet etching combines chamber-atmosphere and IPA-dispense control to address particles and drying-related pattern collapse.
- Scope of use
- The named i MD covers 300 mm silicon and exposed metals including Cu; bonding-stack compatibility needs confirmation.
- Limitations and open questions
These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.
Scope and limitationsNo qualified recipe for the target hybrid-bond stack is published. Low-damage claims do not replace surface or bonding tests.
What to prepareBLNKK suggests preparing exposed films, contaminants, topography, roughness and oxide tolerances, plus cleaning-to-bonding wait conditions.
Confirm with the supplierConfirm chemical compatibility, drying configuration and acceptance checks for particles, surface loss, watermarks and subsequent bonding.
- Public evidence
- TEL’s i MD body and table identify cleaning, wet etching and New IPA dry/SMD.
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Related engineering problems
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BLNKK organizes information from public sources. A company profile does not imply a documented solution. Applicability still needs confirmation against your samples and engineering conditions.
