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CELLESTA-i MD metal-exposed surface cleaning/drying

Tokyo Electron · Process equipment and thermal control

Purpose
Evaluate wet cleaning and drying of metal-exposed wafers before bonding.
Technical approach
Single-wafer chemical cleaning/wet etching combines chamber-atmosphere and IPA-dispense control to address particles and drying-related pattern collapse.
Scope of use
The named i MD covers 300 mm silicon and exposed metals including Cu; bonding-stack compatibility needs confirmation.
Limitations and open questions

These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.

Scope and limitations

No qualified recipe for the target hybrid-bond stack is published. Low-damage claims do not replace surface or bonding tests.

What to prepare

BLNKK suggests preparing exposed films, contaminants, topography, roughness and oxide tolerances, plus cleaning-to-bonding wait conditions.

Confirm with the supplier

Confirm chemical compatibility, drying configuration and acceptance checks for particles, surface loss, watermarks and subsequent bonding.

Public evidence
TEL’s i MD body and table identify cleaning, wet etching and New IPA dry/SMD.

Contact the supplier

Find the company’s contact details and ask about this solution through its official channels.

Related engineering problems

These links use established solution relationships. Continue to engineering conditions and evaluation preparation.

BLNKK organizes information from public sources. A company profile does not imply a documented solution. Applicability still needs confirmation against your samples and engineering conditions.