Wave3000 contactless wafer warp, bow and thickness metrology

ERS electronic · Warpage, topography and stress metrology

Purpose: Reconstituted and thin wafers can change shape with processing, support and temperature. Whole-wafer bow, warp and thickness measurements support handling and process decisions.
Technical approach: Optical scanning reconstructs a 3D contour with free-standing, vacuum, three-pin or end-effector support and heated measurement capability.
Scope of use: For process comparisons on 200/300 mm silicon, molded and other wafers; confirm surfaces and configurations.
Limitations and open questions: These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.
Scope and limitations
Published sources do not establish continuous reflow imaging. Their heating ranges and uniformity differ, so the current configuration must be confirmed.
What to prepare
BLNKK suggests preparing wafer dimensions, material and surface details, expected warpage, support conditions, measurement temperatures and repeatability targets, with representative samples.
Confirm with the supplier
Confirm the current heating range and uniformity, sensor and calibration conditions, stabilization time, actual scan time and export format.
Public evidence: The product page and brochure both specify bow, warp and thickness measurements, with scans under one minute. Accuracy depends on the sensor and warpage; the two sources give different heating specifications.

Supporting references

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