Shin-Etsu MicroSi SINR photoimageable dielectric
Shin-Etsu MicroSi · Material properties and interface engineering
- Purpose
- Compare permanent RDL dielectric/interface conditions when assessing thermal-cycling open risks.
- Technical approach
- Photoimageable SINR siloxane forms permanent dielectric/stress-buffer layers through grade-specific patterning and curing.
- Scope of use
- Evaluate material selection with current grade/cure/interface data and representative stack coupons.
- Limitations and open questions
These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.
Scope and limitationsHistorical grade/process results do not qualify all current SINR or prove prevention of thermal opens or repair of cracked RDL.
What to prepareBLNKK suggests preparing grade, cure history, modulus/CTE, shrinkage, moisture and adhesion data alongside stack/electrical controls.
Confirm with the supplierConfirm current-grade data, pattern/cure conditions, metal compatibility and representative-stack cycling/interface validation.
- Public evidence
- The current catalog lists SINR; a SPIE 2006 study documents named SINR3150HSM processing.
Supporting references
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BLNKK organizes information from public sources. A company profile does not imply a documented solution. Applicability still needs confirmation against your samples and engineering conditions.