FLX-2320-S / FLX-3300-T thermal thin-film stress metrology
Toho Technology · Warpage, topography and stress metrology
- Purpose
- Thermal-expansion mismatch and changing film stress can cause wafer bending, cracks or voids. Before/after measurements can miss behavior during heating and cooling.
- Technical approach
- FLX scans wafer curvature using selectable laser wavelengths and converts curvature changes into film stress using substrate biaxial modulus, substrate/film thickness and the Stoney relation.
- Scope of use
- The thermal models support film-process development: FLX-2320-S scans up to 200 mm and FLX-3300-T up to 300 mm. Heating reaches 500°C; subambient measurement requires an option.
- Limitations and open questions
These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.
Scope and limitationsStress is inferred from curvature and material inputs, not measured locally inside a package. Confirm model assumptions, reflected signals and sampling for multilayer or nonuniform specimens.
What to prepareBring pre/post-deposition samples, film/substrate thicknesses, modulus data, surface condition, thermal profiles and regions of interest to plan measurement and interpretation.
Confirm with the supplierConfirm S/T model suitability, holders, subambient/3D-analysis options, and calibration/repeatability acceptance. Ask about multilayer stress separation and data export.
- Public evidence
- Official model specifications describe thermal cycling and curvature/stress analysis, with -65°C cooling optional. The theory page distinguishes measured curvature from calculated stress.
Supporting references
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