kSA MOS ThermalScan temperature-dependent wafer curvature and film-stress metrology
k-Space Associates · Warpage, topography and stress metrology
- Purpose
- Annealing and thermal cycling change wafer curvature, bow and film stress. Temperature-dependent data support process comparisons and material-model calibration.
- Technical approach
- A multi-beam optical sensor uses a laser array to track reflected-spot changes and derive curvature, bow and stress data during programmed heating under vacuum or process gas.
- Scope of use
- TS300-HT holds 300-mm wafers and line-scans to 1000°C. Area scanning needs an optional second lid and is limited to 600°C; ramping uses center-point acquisition, while area mapping requires stabilized temperature.
- Limitations and open questions
These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.
Scope and limitations1000°C line scanning does not imply full-area mapping at that temperature, and ramp center-point data are not dynamic full-field maps. Stress conversion and quoted accuracy depend on specimen and material assumptions.
What to prepareBring sample dimensions, surface/film information, thickness/modulus data, thermal and atmosphere requirements, and the desired point/line/area scan and acceptance region.
Confirm with the supplierConfirm HT/MT model, lid and cooling options, scan coverage and temperature calibration. Request representative-sample evidence for signal quality, repeatability and data available during the thermal recipe.
- Public evidence
- The January 2026 specification separates models, scan modes and temperatures. Stated accuracy on 300-mm wafers requires central 200-mm scanning, with additional specimen assumptions for stress accuracy.
Supporting references
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