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Current problemSeams and voids in TSV copper fill
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Seams and voids in TSV copper fill

Check BLNKK's understanding of the problem, then review priority paths, candidate solutions and missing conditions.

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3 priority paths9 candidate solutions10 sources

BLNKK's current understanding

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Structure / bonding interface
Electroplated copper inside TSVs in silicon
Observation stage
Deep-via copper filling and before/after subsequent CMP
Phenomenon to localize
Seams or internal voids in TSV copper
Engineering decision
Use depth distributions and via-fill morphology to determine comparisons of plating mass transport, seed coverage or pretreatment
Sample evidence still required
Are seams/voids inside the TSV copper before reveal?

Paths to assess first

Paths serve different purposes and can be combined
01
Depth distribution and targeted samplingConfirm the in-via locations of seams/voids
First
02
Seed-coverage and wetting comparisonsSeparate plateable surfaces from their state before bath entry
First
03
Plating mass-transport and via-fill-window comparisonsCompare bath/flow under known via geometry
First

Current candidate solutions

Sample suitability still needs confirmation
View all 9 candidate solutions
Next: confirm engineering conditionsUse 5 key conditions to adjust the assessment order, then choose solutions to compare.
Check engineering conditions →