SPTS Omega Rapier XE backside TSV reveal etching
KLA · Process equipment and thermal control
- Purpose
- Distinguish thinning and silicon-etch contributions to nonuniform backside TSV reveal height.
- Technical approach
- Rapier XE blanket backside silicon etching exposes Cu-filled TSVs, with recipe-tuneable uniformity and endpoint configuration requiring confirmation.
- Scope of use
- TSV backside silicon removal after checking carrier support, remaining silicon, stop layers and target reveal height.
- Limitations and open questions
These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.
Scope and limitationsSilicon reveal is not copper etching or a final bond-surface coplanarity guarantee. Other Omega/deposition module capabilities are separate.
What to prepareBLNKK suggests pre/post-thinning and etch height maps, edge data, TSV stackup, remaining silicon and carrier conditions.
Confirm with the supplierConfirm endpoint, uniformity tuning, stop-layer/carrier compatibility and representative-stack trials, including subsequent planarization needs.
- Public evidence
- Page 2 of KLA's April 19, 2022 process brochure identifies Rapier XE for silicon via-reveal etching.
Contact the supplier
Find the company’s contact details and ask about this solution through its official channels.
Related engineering problems
These links use established solution relationships. Continue to engineering conditions and evaluation preparation.
BLNKK organizes information from public sources. A company profile does not imply a documented solution. Applicability still needs confirmation against your samples and engineering conditions.