MA12 Gen3 packaging resist exposure/alignment
SUSS MicroTec · Process equipment and thermal control
- Purpose
- Compare resist-pattern exposure/alignment before bump formation and subsequent height assessment.
- Technical approach
- Mask alignment, dose control and real-time gap leveling support configured contact/proximity exposure.
- Scope of use
- Evaluate packaging resist patterns on wafers up to 300 mm with compatible optics/tooling.
- Limitations and open questions
These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.
Scope and limitationsExposure capability does not establish uniform plated-bump heights; specialized optics/toolkits are not universally installed.
What to prepareBLNKK suggests preparing resist/thickness, masks/openings, exposure/development conditions, wafer shape and subsequent plated-height data.
Confirm with the supplierConfirm exposure/alignment modes, optics/tooling, supported thickness/warpage and pattern/downstream validation.
- Public evidence
- The MA12 Gen3 page documents exposure/alignment, dose/gap control and warped-wafer toolkits.
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Find the company’s contact details and ask about this solution through its official channels.
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BLNKK organizes information from public sources. A company profile does not imply a documented solution. Applicability still needs confirmation against your samples and engineering conditions.