Calibre 3DStress multiscale stress and warpage analysis for 3D ICs

Siemens Digital Industries Software · Thermo-mechanical simulation and lifetime prediction

Purpose: Evaluates assembly- and temperature-induced stress, die warpage and device sensitivity in 3D ICs, supporting TSV-adjacent design decisions.
Technical approach: Layout and material data feed multiscale FEA from package to device; stress effects can be back-annotated into electrical analysis.
Scope of use: For stacked dies, heterogeneous integration and chip-package co-design requiring local stress and assembly-level context.
Limitations and open questions: These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.
Scope and limitations
Coarse package analysis can proceed without die detail; device-level accuracy needs feature structure/material data. Predictions do not establish universal TSV keep-out distances or electrical-yield qualification.
What to prepare
BLNKK suggests TSV/device geometry, materials, thermal history, measured stress/device response and foundry acceptance criteria.
Confirm with the supplier
Confirm software release, input data, back-annotation interfaces and correlation methods, including who validates electrical keep-out criteria.
Public evidence: The current product page and 2025 articles describe multiscale analysis and device-level back-annotation. The official FAQ distinguishes coarse package analysis without die detail from feature-level analysis requiring detailed structures and materials.

Supporting references

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