Reflexion LK copper/dielectric CMP planarization

Applied Materials · Process equipment and thermal control

Purpose: Assess copper/dielectric height differences in TSV planarization and hybrid-bond surfaces alongside contamination and bonding results.
Technical approach: Reflexion LK combines three-platen sequential CMP, endpoint/profile control, post-CMP cleaning and vapor drying.
Scope of use: A 300 mm platform; Applied/Besi's 2023 presentation lists TSV planarization, reveal polishing and hybrid-bond copper CMP roles.
Limitations and open questions: These evaluation considerations are compiled by BLNKK from public information. They are not supplier guarantees or a mandatory submission checklist.
Scope and limitations
Case-study heights and yields are not universal equipment specifications. CMP surface control does not replace cleaning, bonding or electrical qualification.
What to prepare
BLNKK suggests preparing film stacks, pattern density, incoming profiles, dishing targets and existing slurry/pad choices, with post-polish topography, particle and bonding comparisons.
Confirm with the supplier
Confirm material recipes, endpoint/profile options, cleaning compatibility and measurement methods before jointly defining sample trials and bonding-surface acceptance.
Public evidence: The product page documents platform capabilities; the IMAPS presentation illustrates CMP/barrier-profile co-optimization.

Supporting references

Find the company’s contact details and ask about this solution through its official channels.