Kinex integrated die-to-wafer hybrid bonding system
Delay after surface activation, contamination and alignment drift can affect die-to-wafer hybrid-bond consistency. Multi-die stacks also require traceable process records.
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View contact information ↓Applications: 3D IC, HBM, CPO and sensors · TSV dielectric liners · Pre-plating TSV metallization · TSV / hybrid-bond surfaces · HBM thin-die backside / carrier wafers
Delay after surface activation, contamination and alignment drift can affect die-to-wafer hybrid-bond consistency. Multi-die stacks also require traceable process records.
Assess dielectric coverage through TSV depth when evaluating deposition conditions and leakage risk.
Compare TSV barrier and copper-seed coverage before electroplating, focusing on metallization continuity through deep vias.
Assess copper/dielectric height differences in TSV planarization and hybrid-bond surfaces alongside contamination and bonding results.
Evaluate backside dielectric stress compensation before thin-die stacking.
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